1 TN2640 12/19/01 supertex inc. does not recommend the use of its products in life support applications and will not knowingly sell its products for use in such applications unless it receives an adequate "products liability indemnification insurance agreement." supertex does not assume responsibility for use of devices described and limits its liabi lity to the replacement of devices determined to be defective due to workmanship. no responsibility is assumed for possible omissions or inaccuracies. circuitry and specifications are subject to c hange without notice. for the latest product specifications, refer to the supertex website: http://www.supertex.com. for complete liability information on all supertex products, refer to the most curre nt databook or to the legal/disclaimer page on the supertex website. n-channel enhancement-mode v ertical dmos fets TN2640 low threshold features ? low threshold ?2.0v max. ? high input impedance ? low input capacitance ? fast switching speeds ? low on resistance ? free from secondary breakdown ? low input and output leakage ? complementary n- and p-channel devices absolute maximum ratings drain-to-source voltage bv dss drain-to-gate voltage bv dgs gate-to-source voltage 20v operating and storage temperature -55 c to +150 c soldering temperature* 300 c * distance of 1.6 mm from case for 10 seconds. applications ? logic level interfaces ?ideal for ttl and cmos ? solid state relays ? battery operated systems ? photo voltaic drives ? analog switches ? general purpose line drivers ? telecom switches low threshold dmos technology these low threshold enhancement-mode (normally-off) transis- tors utilize a vertical dmos structure and supertex's well-proven silicon-gate manufacturing process. this combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inherent in mos devices. characteristic of all mos structures, these devices are free from thermal runaway and thermally induced secondary breakdown. supertex? vertical dmos fets are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. package options note: see package outline section for dimensions. bv dss /r ds(on) v gs(th) i d(on) bv dgs (max) (max) (min) so-8 to-92 dpak die ? 400v 5.0 ? 2.0v 2.0a TN2640lg TN2640n3 TN2640k4 TN2640nd ? mil visual screening available. ordering information order number / package s g d t o-92 1 2 3 4 8 7 6 5 top view so-8 nc nc s g d d d d g s d (tab) to- 252 (d-pak)
2 TN2640 package i d (continuous)* i d (pulsed) power dissipation jc ja i dr *i drm @ t c = 25 c c/w c/w to-92 220ma 2.0a 1.0w 125 170 220ma 2.0a so-8 260ma 2.0a 1.3w ? 24 96 ? 260ma 2.0a dpak 500ma 3.0a 2.5w ? 6.25 50 500ma 3.0a * i d (continuous) is limited by max rated t j . ? mounted on fr4 board, 25mm x 25mm x 1.57mm. thermal characteristics 90% 10% 90% 90% 10% 10% pulse generator v dd r l output d.u.t. t (on) t d(on) t (off) t d(off) t f t r input input output 10v v dd r gen 0v 0v switching waveforms and test circuit symbol parameter min typ max unit conditions bv dss 400 v v gs = 0v, i d = 1.0ma v gs(th) gate threshold voltage 0.8 2.0 v v gs = v ds , i d = 2.0ma ? v gs(th) change in v gs(th) with temperature -2.5 -4.0 mv/ cv gs = v ds , i d = 2.0ma i gss gate body leakage 100 na v gs = 20v, v ds = 0v i dss zero gate voltage drain current 10 av gs = 0v, v ds = max rating 1.0 ma v gs = 0v, v ds = 0.8 max rating t a = 125 c i d(on) on-state drain current 1.5 3.5 v gs = 5.0v, v ds = 25v 2.0 4.0 v gs = 10v, v ds = 25v r ds(on) 3.2 5.0 v gs = 4.5v, i d = 500ma 3.0 5.0 v gs = 10v, i d = 500ma ? r ds(on) change in r ds(on) with temperature 0.75 %/ cv gs = 10v, i d = 500ma g fs forward transconductance 200 330 m v ds = 25v, i d = 100ma c iss input capacitance 180 225 c oss common source output capacitance 35 70 pf c rss reverse transfer capacitance 7.0 25 t d(on) turn-on delay time 4.0 15 t r rise time 15 20 t d(off) turn-off delay time 20 25 t f fall time 22 27 v sd diode forward voltage drop 0.9 v v gs = 0v, i sd = 200ma t rr reverse recovery time 300 ns v gs = 0v, i sd = 1.0a notes: 1. all d.c. parameters 100% tested at 25 c unless otherwise stated. (pulse test: 300 s pulse, 2% duty cycle.) 2. all a.c. parameters sample tested. a electrical characteristics (@ 25 c unless otherwise specified) drain-to-source breakdown voltage v gs = 0v, v ds = 25v f = 1.0 mhz v dd = 25v, i d = 2.0a, r gen = 25 ? ns static drain-to-source on-state resistance ? ?
3 TN2640 t ypical performance curves output characteristics 5.0 4.0 3.0 2.0 1.0 0 v ds (volts) i d (amperes) i d (amperes) saturation characteristics v ds (volts) maximum rated safe operating area 0 1000 100 10 10 1.0 0.1 0.01 0.001 v ds (volts) i d (amperes) thermal response characteristics thermal resistance (normalized) 1.0 0.8 0.6 0.4 0.2 0 0.001 10 0.01 0.1 1.0 t p (seconds) t ransconductance vs. drain current 2.0 1.6 1.2 0.8 0.4 0 0 2.0 1.0 g fs (siemens) i d (amperes) d power dissipation vs. temperature 0 150 100 50 3.0 2.4 1.8 1.2 0.6 0 125 75 25 t c ( c) p d (watts) to-92 t c = 25 c p d = 1.0w so-8 to-92 t a = -55 c v ds = 25v 0 10 20 30 50 40 0246 10 8 25 c 125 c 3.0 5.0 4.0 2.5 2.0 1.5 1.0 0.5 0 4v 8v v gs = 10v to-92 (pulsed) t c = 25 c to-92 (dc) so-8 (dc) 2v 4v 3v 6v 8v 2v 3v 6v v gs = 10v so-8 (pulsed) dpak dpak (dc)
4 TN2640 1235 bordeaux drive, sunnyvale, ca 94089 tel: (408) 744-0100 ?fax: (408) 222-4895 www.supertex.com 12/19/01rev.1 ?001 supertex inc. all rights reserved. unauthorized use or reproduction prohibited. gate drive dynamic characteristics q g (nanocoulombs) v gs (volts) t j ( c) v gs(th) (normalized) r ds(on) (normalized) v th and r ds variation with temperature on-resistance vs. drain current r ds(on) (ohms) bv dss (normalized) t j ( c) transfer characteristics v gs (volts) i d (amperes) capacitance vs. drain-to-source voltage 400 c (picofarads) v ds (volts) i d (amperes) bv dss variation with temperature 010203040 200 300 100 0 0246810 3.0 2.4 1.8 1.2 0.6 0 -50 0 50 100 150 1.15 1.10 1.05 1.00 0.95 0.90 10 8 6 4 2 0 1.4 1.2 1.0 0.8 0.6 0.4 10 8 6 4 2 012 3 45 -50 0 50 100 150 253pf v ds = 10v v ds = 40v 653pf v gs = 10v v gs = 5v 125 c 0 1.0 2.0 3.0 5.0 4.0 f = 1mhz c iss c oss c rss 0.9 2.2 1.8 1.4 1.0 0.6 0.2 25 c t a = -55 c v ds = 25v 0 v (th) @ 2ma r ds(on) @ 10v, 0.5a t ypical performance curves
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